Dale C.
Jacobson
Publikationen, an denen er mitarbeitet Dale C. Jacobson (8)
1999
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Boron pileup and clustering in silicon-on-insulator films
Applied Physics Letters, Vol. 75, Núm. 8, pp. 1083-1085
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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301
1998
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Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation
SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2
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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274
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Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon
Materials Science in Semiconductor Processing, Vol. 1, Núm. 1, pp. 17-25
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Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model
Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184
1997
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Boron-Enhanced-Diffusion of boron: The limiting factor for ultra-shallow junctions
Technical Digest - International Electron Devices Meeting, IEDM
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Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials
Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143