Disciplina temática
Ingeniería eléctrica, electrónica y telecomunicaciones
Artículos (12) Publicaciones en las que ha participado algún/a investigador/a
1992
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A study of metal-oxide-semiconductor capacitors fabricated on SF 6 and SF6+Cl2 reactive-ion-etched Si
Journal of Applied Physics, Vol. 71, Núm. 6, pp. 2710-2716
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Admittance spectroscopy in junctions
Solid State Electronics, Vol. 35, Núm. 3, pp. 285-297
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Analysis of the transient spectral density of velocity fluctuations in GaAs and InP
Journal of Applied Physics, Vol. 72, Núm. 6, pp. 2322-2330
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Comparative Equilibrium Analysis of Metalorganic Chemical Vapor Deposition (MOCVD) GaAs Growth Using Trimethylgallium (TMGa) with Arsine or Trimethylarsine (TMAs)
Japanese Journal of Applied Physics, Vol. 31, Núm. 6 R, pp. 1721-1725
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Computation in kinetics V. A new KINDC computational method. Comparative study with other computer programs for kinetic treatment
Reaction Kinetics & Catalysis Letters, Vol. 48, Núm. 1, pp. 77-83
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Electron transport in InP under high electric field conditions
Semiconductor Science and Technology, Vol. 7, Núm. 1, pp. 31-36
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Evaluation of thermodynamic lonization constants by computation of spectrophotometric and potentiometric experimental data obtained simultaneously from a flow system
Journal of Pharmaceutical Sciences, Vol. 81, Núm. 6, pp. 592-596
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Holographic grating with two spatial frequencies for the simultaneous study of two spectral profiles
Applied Optics, Vol. 31, Núm. 16, pp. 3131-3133
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Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs
Journal of Applied Physics, Vol. 72, Núm. 2, pp. 525-530
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Interwell enhancement of the photoluminescence efficiency in GaAs/AlGaAs quantum wells
Journal of Applied Physics, Vol. 71, Núm. 10, pp. 5136-5139
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Las normas. Pautas fundamentales de trabajo
Montajes e instalaciones: Revista técnica sobre la construcción e ingeniería de las instalaciones, Año 22, Núm. 255, pp. 115-120
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Monte Carlo analysis of the transient spectral density of velocity fluctuations in semiconductors
Applied Physics Letters, Vol. 60, Núm. 5, pp. 613-615