Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

1. Gómez, A.
2. Castán, H.
3. García, H.
4. Dueñas, S.
5. Bailón, L.
6. Pampillón, M.A.
7. Feijoo, P.C.
8. San Andrés, E.