Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer

  1. Martín, M.J.
  2. Pardo, D.
  3. Velázquez, J.E.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2000

Volumen: 88

Número: 3

Pages: 1511-1514

Type: Article

DOI: 10.1063/1.373847 GOOGLE SCHOLAR