Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

1. Vasallo, B.G.
2. Rodilla, H.
3. González, T.
4. Lefebvre, E.
5. Moschetti, G.
6. Grahn, J.
7. Mateos, J.

Export

Export

×

MLA

modern-language-association

APA

apa

Chicago

chicago-fullnote-bibliography

Harvard

harvard-cite-them-right

Vancouver

vancouver-author-date

---

RIS BibTex

Export

×

This document cannot be exported because it belongs to another portal.

Full text

lock_openFull text externo

DOI: 10.12693/APHYSPOLA.119.222 GOOGLE SCHOLAR lock_openOpen access editor

Sustainable development goals

•