InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging

1. Watanabe, T.
2. Boubanga-Tombet, S.A.
3. Tanimoto, Y.
4. Fateev, D.
5. Popov, V.
6. Coquillat, D.
7. Knap, W.
8. Meziani, Y.M.
9. Wang, Y.
10. Minamide, H.
11. Ito, H.
12. Otsuji, T.