Ultrahigh sensitive sub- Terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

  1. Kurita, Y.
  2. Ducoumau, G.
  3. Coquillat, D.
  4. Satou, A.
  5. Kobayashi, K.
  6. Tombet, S.B.
  7. Meziani, Y.M.
  8. Popov, V.V.
  9. Knap, W.
  10. Suemitsu, T.
  11. Otsuji, T.
Revista:
Applied Physics Letters

ISSN: 0003-6951

Any de publicació: 2014

Volum: 104

Número: 25

Tipus: Article

DOI: 10.1063/1.4885499 GOOGLE SCHOLAR

Objectius de Desenvolupament Sostenible