Enhancement of sub-terahertz detection by drain-to-source biasing on strained silicon MODFET devices

  1. Meziani, Y.M.
  2. Morozov, S.
  3. Notario, J.A.D.
  4. Maremyanin, K.
  5. Velázquez, J.E.
  6. Fobelets, K.
Konferenzberichte:
Journal of Physics: Conference Series

ISSN: 1742-6596,  1742-6588

Datum der Publikation: 2015

Ausgabe: 647

Nummer: 1

Art: Konferenz-Beitrag

DOI: 10.1088/1742-6596/647/1/012007 GOOGLE SCHOLAR lock_openOpen Access editor