A physically based model for resistive memories including a detailed temperature and variability description

  1. González-Cordero, G.
  2. González, M.B.
  3. García, H.
  4. Campabadal, F.
  5. Dueñas, S.
  6. Castán, H.
  7. Jiménez-Molinos, F.
  8. Roldán, J.B.
Revue:
Microelectronic Engineering

ISSN: 0167-9317

Année de publication: 2017

Volumen: 178

Pages: 26-29

Type: Article

DOI: 10.1016/J.MEE.2017.04.019 GOOGLE SCHOLAR