Characterization of the DX centers in AlGaAs:Si by admittance spectroscopy

  1. Dueñas, S.
  2. Izpura, I.
  3. Arias, J.
  4. Enríquez, L.
  5. Barbolla, J.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1991

Volumen: 69

Número: 8

Pages: 4300-4305

Type: Article

DOI: 10.1063/1.348403 GOOGLE SCHOLAR

Objectifs de Développement Durable