Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs

  1. Enríquez, L.
  2. Dueñas, S.
  3. Barbolla, J.
  4. Izpura, I.
  5. Muñoz, E.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1992

Volumen: 72

Número: 2

Pages: 525-530

Type: Article

DOI: 10.1063/1.351883 GOOGLE SCHOLAR

Objectifs de Développement Durable