Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors
- Dueñas, S.
- Castán, E.
- Quintanilla, L.
- Enríquez, L.
- Barbolla, J.
- Lora-Tamayo, E.
- Montserrat, J.
ISSN: 1743-2847, 0267-0836
Year of publication: 1995
Volume: 11
Issue: 10
Pages: 1074-1078
Type: Article