On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2, Ta2O5 and Nb 2O5-Ta2O5-Nb2O 5 dielectric thin films

  1. Dueñas, S.
  2. Castán, H.
  3. García, H.
  4. Barbolla, J.
  5. Kukli, K.
  6. Ritala, M.
  7. Leskelä, M.
Proceedings:
Materials Research Society Symposium - Proceedings

ISSN: 0272-9172

Year of publication: 2003

Volume: 786

Pages: 147-152

Type: Conference paper

DOI: 10.1557/PROC-786-E3.18 GOOGLE SCHOLAR