On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2, Ta2O5 and Nb 2O5-Ta2O5-Nb2O 5 dielectric thin films
- Dueñas, S.
- Castán, H.
- García, H.
- Barbolla, J.
- Kukli, K.
- Ritala, M.
- Leskelä, M.
Proceedings:
Materials Research Society Symposium - Proceedings
ISSN: 0272-9172
Year of publication: 2003
Volume: 786
Pages: 147-152
Type: Conference paper