Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

  1. Mok, K.R.C.
  2. Jaraiz, M.
  3. Martin-Bragado, I.
  4. Rubio, J.E.
  5. Castrillo, P.
  6. Pinacho, R.
  7. Barbolla, J.
  8. Srinivasan, M.P.
Zeitschrift:
Journal of Applied Physics

ISSN: 0021-8979

Datum der Publikation: 2005

Ausgabe: 98

Nummer: 4

Art: Artikel

DOI: 10.1063/1.2014940 GOOGLE SCHOLAR