Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D

  1. Singer, J.
  2. Salvetti, F.
  3. Kaeppelin, V.
  4. Wacquant, F.
  5. Cagnat, N.
  6. Jaraiz, M.
  7. Castrillo, P.
  8. Rubio, E.
  9. Poncet, A.
Actes de conférence:
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

ISBN: 9781424411238

Année de publication: 2007

Volumen: 2007

Pages: 338-341

Type: Communication dans un congrès

DOI: 10.1109/ESSDERC.2007.4430947 GOOGLE SCHOLAR