Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects

  1. Aboy, M.
  2. Pelaz, L.
  3. López, P.
  4. Bruno, E.
  5. Mirabella, S.
  6. Napolitani, E.
Revista:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology

ISSN: 0921-5107

Ano de publicación: 2008

Volume: 154-155

Número: 1-3

Páxinas: 247-251

Tipo: Artigo

DOI: 10.1016/J.MSEB.2008.09.034 GOOGLE SCHOLAR