Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

  1. Santos, I.
  2. Castrillo, P.
  3. Windl, W.
  4. Drabold, D.A.
  5. Pelaz, L.
  6. Marqués, L.A.
Aldizkaria:
Physical Review B - Condensed Matter and Materials Physics

ISSN: 1098-0121,  1550-235X

Argitalpen urtea: 2010

Alea: 81

Zenbakia: 3

Mota: Artikulua

DOI: 10.1103/PHYSREVB.81.033203 GOOGLE SCHOLAR lock_openUVADOC editor

Garapen Iraunkorreko Helburuak