Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation

  1. García, L.J.
  2. Kawamura, Y.
  3. Uematsu, M.
  4. Hernndez-Mangas, J.M.
  5. Itoh, K.M.
Revista:
Journal of Applied Physics

ISSN: 0021-8979

Any de publicació: 2011

Volum: 109

Número: 12

Tipus: Article

DOI: 10.1063/1.3592256 GOOGLE SCHOLAR