Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates

  1. Campabadal, F.
  2. Rafí, J.M.
  3. Zabala, M.
  4. Beldarrain, O.
  5. Faigón, A.
  6. Castán, H.
  7. Gómez, A.
  8. García, H.
  9. Dueas, S.
Revue:
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

ISSN: 2166-2754,  2166-2746

Année de publication: 2011

Volumen: 29

Número: 1

Type: Communication dans un congrès

DOI: 10.1116/1.3532544 GOOGLE SCHOLAR

Objectifs de Développement Durable