Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces

  1. Santos, I.
  2. Cazzaniga, M.
  3. Onida, G.
  4. Colombo, L.
Revue:
Journal of Physics Condensed Matter

ISSN: 0953-8984 1361-648X

Année de publication: 2014

Volumen: 26

Número: 9

Type: Article

DOI: 10.1088/0953-8984/26/9/095001 GOOGLE SCHOLAR lock_openUVADOC editor