Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices

  1. Garcia, H.
  2. Ossorio, O.G.
  3. Duenas, S.
  4. Castan, H.
Actas:
LAEDC 2020 - Latin American Electron Devices Conference

ISBN: 9781728110448

Ano de publicación: 2020

Tipo: Achega congreso

DOI: 10.1109/LAEDC49063.2020.9073011 GOOGLE SCHOLAR

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