Controlling the intermediate conductance states in RRAM devices for synaptic applications

  1. García, H.
  2. Ossorio, O.G.
  3. Dueñas, S.
  4. Castán, H.
Journal:
Microelectronic Engineering

ISSN: 0167-9317

Year of publication: 2019

Volume: 215

Type: Article

DOI: 10.1016/J.MEE.2019.110984 GOOGLE SCHOLAR lock_openUVADOC editor

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