Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

  1. Castán, H.
  2. Dueñas, S.
  3. Kukli, K.
  4. Kemell, M.
  5. Ritala, M.
  6. Leskelä, M.
Proceedings:
ECS Transactions

ISSN: 1938-5862,  1938-6737

ISBN: 9781607688365

Year of publication: 2018

Volume: 85

Issue: 8

Pages: 143-148

Type: Conference paper

DOI: 10.1149/08508.0143ECST GOOGLE SCHOLAR