Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
- Jaraiz, M.
- Gilmer, G.H.
- Poate, J.M.
- De La Rubia, T.D.
ISSN: 0003-6951
Année de publication: 1996
Volumen: 68
Número: 3
Pages: 409-411
Type: Article