Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

  1. Jaraiz, M.
  2. Gilmer, G.H.
  3. Poate, J.M.
  4. De La Rubia, T.D.
Aldizkaria:
Applied Physics Letters

ISSN: 0003-6951

Argitalpen urtea: 1995

Orrialdeak: 409

Mota: Artikulua

DOI: 10.1063/1.116701 GOOGLE SCHOLAR