Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

  1. Orfao, B.
  2. Di Gioia, G.
  3. Vasallo, B.G.
  4. Pérez, S.
  5. Mateos, J.
  6. Roelens, Y.
  7. Frayssinet, E.
  8. Cordier, Y.
  9. Zaknoune, M.
  10. González, T.
Aldizkaria:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Argitalpen urtea: 2022

Alea: 132

Zenbakia: 4

Mota: Artikulua

DOI: 10.1063/5.0100426 GOOGLE SCHOLAR lock_openSarbide irekia editor