Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques

  1. O. Martínez 1
  2. B. Moralejo 1
  3. V. Hortelano 1
  4. A. Tejero 1
  5. M.A. González 1
  6. J. Jiménez 1
  7. J. Mass 2
  8. V. Parra 3
  1. 1 University de Valladolid
  2. 2 Universidad del Norte
    info

    Universidad del Norte

    Barranquilla, Colombia

    ROR https://ror.org/031e6xm45

  3. 3 DC Wafers Investments
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Llibre:
Proceedings of the 2013 Spanish Conference on Electron Devices
  1. Héctor García
  2. Helena Castán

Editorial: Universidad de Valladolid

ISBN: 9781467346665

Any de publicació: 2013

Tipus: Capítol de llibre

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Resum

Multi-crystalline Si is the preferred material in the photovoltaic world market due to the good balance between production costs and efficiency. However, it has a large number of defects acting as recombination centers for the photogenerated carriers. In this work, we use both the fast inspection provided by the photoluminescence imaging technique with the very high spatial resolution of the light beam induced current and electron beam induced current techniques, for obtaining a comprehensive understanding of the electrical activity and distribution of defects in this material.

Fuente de los datos: Dialnet