Schottky Barrier MOSFETs working in the linear regimeA Monte Carlo study of microscopic transport

  1. Carlos Couso 1
  2. Raúl Rengel 1
  3. María J. Martin 1
  1. 1 Universidad de Salamanca
    info

    Universidad de Salamanca

    Salamanca, España

    ROR https://ror.org/02f40zc51

Livre:
Proceedings of the 2013 Spanish Conference on Electron Devices
  1. Héctor García
  2. Helena Castán

Éditorial: Universidad de Valladolid

ISBN: 9781467346665

Année de publication: 2013

Type: Chapitre d'ouvrage

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Résumé

This paper presents a detailed study (using a 2D Monte Carlo simulator) of the impact on electronic transport of dopant segregation layers in Schottky Barrier MOSFETs operating under the linear regime. It is shown that with a careful control of the layer parameters the performance of the devices are significantly improved, with a boosting of the drive current and an important reduction of the linear resistance (Rds(on)). The origin of these advantages can be related to internal microscopic transport quantities like transit time, distance travelled, scattering mechanisms, etc. The enhanced performance of Schottky Barrier MOSFETs including dopant segregation layers confirms the suitability of this technology to help extending the IRTS roadmap for Silicon MOS devices.

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