Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation

  1. Delgado Notario, J. A.
  2. Javadi, E.
  3. Calvo-Gallego, J.
  4. Diez, E.
  5. Velazquez, J. E.
  6. Meziani, Y. M.
  7. Fobelets, K.
Büchersammlung:
FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES
  1. Ryzhii, M (coord.)
  2. Satou, A (coord.)
  3. Otsuji, T (coord.)

ISSN: 1793-1274

ISBN: 978-981-3223-28-8,  978-981-3223-27-1

Datum der Publikation: 2017

Ausgabe: 58

Seiten: 87-95

Kongress: 5th Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech)

Art: Konferenz-Beitrag

GOOGLE SCHOLAR
Fuente de los datos: WoS