Optical and magnetotranspor characterization of Solar-Grade MC-silicon wafers
- V. Parra
- M. Amado
- C. Sánchez-Fabrés
-
E. Díez
- V. Bellani
- F. Dionigi
- F. Rosella
- J.M. Caridad
- Y.M. Meziani
- J. Gutiérrez
- T. del Caño
ISBN: 3-936338-25-6
Year of publication: 2009
Pages: 2120-2124
Congress: Proceedings de 24h European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, Hamburg , 21 - 25 September 2009
Type: Conference paper
Abstract
Multicrystalline silicon (mc-Si) wafers from different suppliers have been characterized combiningoptical and transport measurements. Using several optical techniques, namely spectroscopic ellipsometry and opticalabsorption, together with magneto-transport measurements such as Hall density and mobility, resistance andcapacitance, and their temperature dependence, one can obtain very precise information about main physicalparameters such as electronic density, mobility, real and complex refractive index, absorption coefficient and strainson the grain boundaries. This preliminary study, based on two different physical approaches, aims to qualify wafersuppliers on the basis of several non-conventional properties of mc-Si wafers that can be of crucial interest tocomplete the scarce information usually included in the classical wafer manufacturer’s datasheet. Thus, this type ofcharacterization can be considered as crucial for solar cells producers, as a first quality control step