Reset transition in HfO2-Based memristors using a constant power signal

  1. García, H.
  2. Vinuesa, G.
  3. González, M.B.
  4. Campabadal, F.
  5. Castán, H.
  6. Dueñas, S.
Aldizkaria:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Argitalpen urtea: 2025

Alea: 186

Mota: Artikulua

DOI: 10.1016/J.MSSP.2024.109037 GOOGLE SCHOLAR