Forming and Resistive Switching of HfO2-Based RRAM Devices at Cryogenic Temperature

1. Quesada, E.P.-B.
2. Mistroni, A.
3. Jia, R.
4. Reddy, K.D.S.
5. Reichmann, F.
6. Castan, H.
7. Duenas, S.
8. Wenger, C.
9. Perez, E.