Publikationen, an denen er mitarbeitet Tomás Díaz de la Rubia (7)

1996

  1. Atomic scale simulations of arsenic ion implantation and annealing in silicon

    Materials Research Society Symposium - Proceedings

  2. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, Vol. 68, Núm. 3, pp. 409-411

  3. Simulations of thin film deposition from atomic and cluster beams

    Materials Science and Engineering B, Vol. 37, Núm. 1-3, pp. 1-7

1995

  1. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, pp. 409

  2. Defects from implantation in silicon by linked Marlow-molecular dynamics calculations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182

  3. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

  4. Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 207-210