Publicacións en colaboración con investigadores/as de AT and T Bell Laboratories (20)

2001

  1. Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

2000

  1. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

  2. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings, Vol. 610, pp. B7.2.1-B7.2.6

  3. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  3. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

1998

  1. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

    Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184

  2. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423

1997

  1. B diffusion and clustering in ion implanted Si: The role of B cluster precursors

    Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287

  2. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

  3. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050

1996

  1. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, Vol. 68, Núm. 3, pp. 409-411

  2. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159

  3. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, Vol. 68, Núm. 17, pp. 2395-2397

  4. Simulations of thin film deposition from atomic and cluster beams

    Materials Science and Engineering B, Vol. 37, Núm. 1-3, pp. 1-7

1995

  1. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, pp. 409

  2. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

  3. Ion implantation and transient enhanced diffusion

    Technical Digest - International Electron Devices Meeting

  4. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395