Publicacións en colaboración con investigadores/as de National University of Singapore (7)

2008

  1. Comprehensive model of damage accumulation in silicon

    Journal of Applied Physics, Vol. 103, Núm. 1

2006

  1. Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

    Materials Research Society Symposium Proceedings

2005

  1. Bimodal distribution of damage morphology generated by ion implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Comprehensive modeling of ion-implant amorphization in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    Journal of Applied Physics, Vol. 98, Núm. 4

  4. Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Physically based modeling of dislocation loops in ion implantation processing in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology