Publicaciones en las que colabora con Andrés Rodríguez Domínguez (20)

2018

  1. Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

    Journal of Applied Physics, Vol. 123, Núm. 11

2016

  1. Local electric field enhancement at the heterojunction of Si/SiGe axially heterostructured nanowires under laser illumination

    Nanotechnology, Vol. 27, Núm. 45

2015

  1. Enhanced signal micro-raman study of SiGe nanowires and SiGe/Si nanowire axial heterojunctions grown using Au and Ga-Au catalysts

    Materials Research Society Symposium Proceedings

2014

  1. Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires

    Nordic Journal of Linguistics, Vol. 1627, Núm. 1

  2. Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires

    Materials Research Society Symposium Proceedings

  3. Raman spectroscopy in group IV Nanowires and nanowire axial heterostructures

    Materials Research Society Symposium Proceedings

  4. Raman spectroscopy in group IV nanowires and nanowire axial heterostructures

    Behavioral and Brain Sciences, Vol. 1659, Núm. 2

  5. Raman spectrum of Si nanowires: Temperature and phonon confinement effects

    Applied Physics A: Materials Science and Processing, Vol. 114, Núm. 4, pp. 1321-1331

2013

  1. Interaction between a laser beam and semiconductor nanowires: Application to the Raman spectrum of Si nanowires

    International Journal of Nanoparticles

  2. Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

    Applied Physics A: Materials Science and Processing, Vol. 113, Núm. 1, pp. 167-176

2012

  1. Microraman spectroscopy of Si nanowires: Influence of size

    Materials Science Forum

2011

  1. Laser induced heating of group IV nanowires

    Materials Research Society Symposium Proceedings

  2. Raman spectrum of group IV nanowires: Influence of temperature

    Materials Research Society Symposium Proceedings

  3. Si and SixGe1-x NWs studied by Raman spectroscopy

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 4, pp. 1307-1310

2010

  1. Micro-Raman spectroscopy of Si nanowires: Influence of diameter and temperature

    Applied Physics Letters, Vol. 96, Núm. 1

  2. Raman spectroscopy study of group IV semiconductor nanowires

    Physics Procedia

2008

  1. Nanostructures with group IV nanocrystals obtained by LPCVD and thermal annealing of SiGeO layers

    Materials Research Society Symposium Proceedings

  2. Raman spectroscopy of group IV nanostructured semiconductors: Influence of size and temperature

    Materials Research Society Symposium Proceedings

2001

  1. Nucleation site location its influence on the microstructure of solid-phase crystallized SiGe films

    Journal of Applied Physics, Vol. 90, Núm. 5, pp. 2544-2552

2000

  1. Analysis of the crystallization kinetics and microstructure of polycrystalline SiGe films by optical techniques

    Materials Research Society Symposium - Proceedings