Publikationen (32) Publikationen von Alejandro Raúl Schulman

2024

  1. Bioplausible Synaptic Behavior of Al/Gd0.3Ca0.7MnO3/Au Memristive Devices for Unsupervised Spiking Neural Networks

    ACS Applied Electronic Materials, Vol. 6, Núm. 1, pp. 292-298

  2. Bipolar Resistive Switching in 2D MoSe2 Grown by Atmospheric Pressure Chemical Vapor Deposition

    ACS Applied Materials and Interfaces, Vol. 16, Núm. 1, pp. 1767-1778

  3. Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices

    Journal of Physics D: Applied Physics, Vol. 57, Núm. 41

  4. Manganite memristive devices: recent progress and emerging opportunities

    Journal of Physics D: Applied Physics, Vol. 57, Núm. 42

  5. Structurally simplified GCMO crossbar design for artificial synaptic networks

    Applied Physics Letters, Vol. 124, Núm. 25

  6. Temperature effect on a weighted vortex spin-torque nano-oscillator for neuromorphic computing

    Scientific Reports, Vol. 14, Núm. 1

  7. The effect of substrate-induced defects on structural and resistive switching properties in Gd0.2Ca0.8MnO3 thin films

    AIP Advances, Vol. 14, Núm. 4

  8. The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers

    Communications Materials, Vol. 5, Núm. 1

2023

  1. Enhancing spin-transfer torque in magnetic tunnel junction devices: Exploring the influence of capping layer materials and thickness on device characteristics

    Journal of Applied Physics, Vol. 133, Núm. 24

  2. Exploring Multifunctionality in MgO-Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties

    Advanced Functional Materials, Vol. 33, Núm. 46

  3. Multilayer spintronic neural networks with radiofrequency connections

    Nature Nanotechnology, Vol. 18, Núm. 11, pp. 1273-1280

  4. Radio-Frequency Spintronic Neural Networks

    2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings

2022

  1. Compact Modeling and SPICE Simulation of GCMO-Based Resistive Switching Devices

    IEEE Transactions on Nanotechnology, Vol. 21, pp. 285-288

  2. Increased Curie temperature and magnetoresistive response by modifying Fe/Mo ratio in Sr2FeMoO6 thin films

    Journal of Magnetism and Magnetic Materials, Vol. 564

  3. Manipulating magnetic and magnetoresistive properties by oxygen vacancy complexes in GCMO thin films

    Journal of Physics Condensed Matter, Vol. 34, Núm. 15

2021

  1. Electron Doping Effect in the Resistive Switching Properties of Al/Gd1- xCaxMnO3/Au Memristor Devices

    ACS Applied Materials and Interfaces, Vol. 13, Núm. 15, pp. 18365-18371

  2. Metastable ferromagnetic flux closure-type domains in strain relaxed Gd0 1Ca0 9MnO3 thin films

    Journal of Physics Condensed Matter, Vol. 33, Núm. 3

  3. Tuned AFM–FM coupling by the formation of vacancy complex in Gd06Ca04MnO3 thin film lattice

    Journal of Physics Condensed Matter, Vol. 33, Núm. 25

2020

  1. Appearance of glassy ferromagnetic behavior in Gd1-xCaxMnO3 (0⩽x⩽1) thin films: A revised phase diagram

    Journal of Magnetism and Magnetic Materials, Vol. 498

2019

  1. Transport properties of resistive switching in Ag/Pr0.6Ca0.4MnO3/Al thin film structures

    Journal of Alloys and Compounds, Vol. 786, pp. 84-90