Publicaciones en las que colabora con Sylvain Bollaert (37)

2018

  1. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

    Journal of Applied Physics, Vol. 123, Núm. 3

2017

  1. Monte Carlo analysis of III-V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs

    2017 Spanish Conference on Electron Devices, CDE 2017

2015

  1. Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs

    Journal of Physics: Conference Series

  2. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

    Journal of Physics: Conference Series

2011

  1. Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

    Nanotechnology, Vol. 22, Núm. 44

2010

  1. Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 10, pp. 2572-2578

  2. Three-terminal junctions operating as mixers, frequency doublers and detectors: A broad-band frequency numerical and experimental study at room temperature

    Semiconductor Science and Technology, Vol. 25, Núm. 12

2009

  1. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

    Applied Physics Letters, Vol. 94, Núm. 10

  2. Frequency response of T-shaped three branch junctions as mixers and detectors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

    Journal of Applied Physics, Vol. 105, Núm. 9

  4. RF doubling and rectification in three-terminal junctions: Experimental characterization and Monte Carlo analysis

    Journal of Physics: Conference Series

2008

  1. Ballistic nanodevices for high frequency applications

    International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808

  2. Comparison between the noise performance of double- and single-gate InP-based HEMTs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540

  3. Monte Carlo simulation of surface charge effects in T-branch nanojunctions

    Physica Status Solidi (C) Current Topics in Solid State Physics

  4. Monte carlo comparison of the noise performance of InAIAs/InGaAs Double-gate and standard HEMTs

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

2007

  1. Ballistic nano-devices for high frequency applications

    Thin Solid Films, Vol. 515, Núm. 10, pp. 4321-4326

  2. Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 11, pp. 2815-2822

  3. Influence of the surface charge on the operation of ballistic T-branch junctions: A self-consistent model for Monte Carlo simulations

    Semiconductor Science and Technology, Vol. 22, Núm. 6, pp. 663-670

  4. Monte Carlo comparison between InAlAs/ InGaAs double-gate and standard HEMTs

    2007 Spanish Conference on Electron Devices, Proceedings

  5. Noise behavior of InP-based double-gate and standard HEMTs: A comparison

    AIP Conference Proceedings