Ignacio
Íñiguez de la Torre Mulas
Nanyang Technological University
Singapur, SingapurPublicaciones en colaboración con investigadores/as de Nanyang Technological University (4)
2024
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Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
2023
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
2019
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Design and fabrication of planar gunn nanodiodes based on doped GaN
Asia-Pacific Microwave Conference Proceedings, APMC
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GaN-based SSD structure for THz applications
Asia-Pacific Microwave Conference Proceedings, APMC