Publikationen, an denen er mitarbeitet Pedro Lopez Martin (70)

2023

  1. First Principles Characterization of PnVmClusters in Crystalline Silicon

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  2. Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2× 1 Substrates

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

2022

  1. Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 42-48

  2. Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 54-59

  3. Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

    Acta Materialia, Vol. 241

2021

  1. Atomistic modeling of laser-related phenomena

    Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics (Elsevier), pp. 79-136

2019

  1. Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study

    Journal of Non-Crystalline Solids, Vol. 503-504, pp. 20-27

  2. On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 458, pp. 179-183

  3. {001} loops in silicon unraveled

    Acta Materialia, Vol. 166, pp. 192-201

2018

  1. I ON Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation

    Journal of Electronic Materials

  3. Modeling SiGe Through Classical Molecular Dynamics Simulations: Chasing an Appropriate Empirical Potential

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  4. W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations

    Journal of Electronic Materials

2017

  1. Characterization of amorphous Si generated through classical molecular dynamics simulations

    2017 Spanish Conference on Electron Devices, CDE 2017

  2. Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique

    2017 Spanish Conference on Electron Devices, CDE 2017

  3. Improved physical models for advanced silicon device processing

    Materials Science in Semiconductor Processing, Vol. 62, pp. 62-79

  4. Ultrafast Generation of Unconventional {001 } Loops in Si

    Physical Review Letters, Vol. 119, Núm. 20

2016

  1. Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations

    Journal of Physics D: Applied Physics, Vol. 49, Núm. 7

  3. Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon

    Materials Science in Semiconductor Processing, Vol. 42, pp. 235-238