Publicacions en què col·labora amb Matteo Bosi (8)

2021

  1. Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 264

2010

  1. Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE

    Physica Status Solidi (C) Current Topics in Solid State Physics

2006

  1. Characterisation of GaAsN layers grown by MOVPE

    Journal of Crystal Growth

  2. Origin of the fluctuations in the luminescence emission in InGaN quantum wells

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7

  3. The properties of GalnP/GaAs heterostructures as a function of growth temperature

    Journal De Physique. IV : JP

2004

  1. Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy

    Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 147-151

2003

  1. Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

2002

  1. Characterization of GaN/InGaN hetero-structures by SEM and CL

    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC