Publikationen in Zusammenarbeit mit Forschern von Consiglio Nazionale delle Ricerche (26)

2015

  1. Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour

    Microelectronics Reliability, Vol. 55, Núm. 9-10, pp. 1750-1753

2010

  1. Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE

    Physica Status Solidi (C) Current Topics in Solid State Physics

2006

  1. Characterisation of GaAsN layers grown by MOVPE

    Journal of Crystal Growth

  2. Origin of the fluctuations in the luminescence emission in InGaN quantum wells

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7

2005

  1. Microscopic optical interferometry study of the cottrell atmospheres in Si-Doped GaAs

    Recent Advances in Multidisciplinary Applied Physics (Elsevier Ltd), pp. 217-221

2004

  1. Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy

    Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 147-151

  2. Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures

    EPJ Applied Physics

2003

  1. Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

2002

  1. Characterization of GaN/InGaN hetero-structures by SEM and CL

    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

  2. Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Photocurrent and photoluminescence in Fe-doped InP

    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

  4. Raman and photoluminescence mapping of lattice matched InGaP/GaAs heterostructures

    Materials Research Society Symposium - Proceedings, Vol. 692, pp. 91-96

2000

  1. Homogeneity of thermally-annealed lightly Fe-doped SI InP

    Materials Research Society Symposium - Proceedings

  2. On the absence of decoration As precipitates at dislocations in Te-doped GaAs

    Journal of Physics Condensed Matter, Vol. 12, Núm. 49, pp. 10335-10342

  3. Uniformity of semi-insulating InP wafers obtained by Fe diffusion

    Journal of Applied Physics, Vol. 88, Núm. 9, pp. 5225-5229

1999

  1. Study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques

    Journal of Materials Research, Vol. 14, Núm. 5, pp. 1732-1743

  2. Uniformity of Fe-diffused semi-insulating InP wafers

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 259-262

1998

  1. Annealing-related phenomena in bulk semi-insulating indium phosphide

    Defect and Diffusion Forum

  2. Annealing-related phenomena in bulk semi-insulating indium phosphide

    Defect and Diffusion Forum, Vol. 157-159, pp. 103-112

1997

  1. Analysis of large impurity atmospheres at dislocations and associated point defect reactions in differently n-doped GaAs crystals

    Journal de Physique III, Vol. 7, Núm. 12, pp. 2339-2360