Publicaciones en las que colabora con C. Gaquière (38)

2021

  1. Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

    Journal of Applied Physics, Vol. 130, Núm. 10

2020

  1. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

    Microelectronics Reliability, Vol. 114

  2. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

    Nanotechnology, Vol. 31, Núm. 40, pp. 405204

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

  2. GaN-based SSD structure for THz applications

    Asia-Pacific Microwave Conference Proceedings, APMC

2018

  1. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

    Semiconductor Science and Technology, Vol. 33, Núm. 9

  2. Planar Asymmetric Semiconductor Nanodiodes for THz Detection

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  3. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

    Applied Physics Letters, Vol. 113, Núm. 4

2017

  1. Geometry and bias dependence of trapping effects in planar GaN nanodiodes

    2017 Spanish Conference on Electron Devices, CDE 2017

  2. Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

    2017 Spanish Conference on Electron Devices, CDE 2017

2016

  1. Room temperature direct and heterodyne detection of 0.28-0.69-THz Waves Based on GaN 2-DEG unipolar nanochannels

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 1, pp. 353-359

2015

  1. 0.69 THz room temperature heterodyne detection using GaN nanodiodes

    Journal of Physics: Conference Series

  2. Erratum: On the effect of δ-doping in self-switching diodes (Applied Physics Letters (2014) 105 (093505))

    Applied Physics Letters

  3. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

    Solid-State Electronics, Vol. 104, pp. 79-85

  4. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

    Semiconductor Science and Technology, Vol. 30, Núm. 3

2014

  1. GaN-based Implanted self switching diodes for THz imaging

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  2. Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

    Semiconductor Science and Technology, Vol. 29, Núm. 11

  3. On the effect of δ-doping in self-switching diodes

    Applied Physics Letters, Vol. 105, Núm. 9

  4. Operation of GaN planar nanodiodes as THz detectors and mixers

    IEEE Transactions on Terahertz Science and Technology, Vol. 4, Núm. 6, pp. 670-677