Publicaciones en las que colabora con Pedro Castrillo Romón (34)

2016

  1. Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2011

  1. Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation

    Journal of Applied Physics

2010

  1. Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

    Thin Solid Films, Vol. 518, Núm. 9, pp. 2448-2453

  2. Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

    Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 3

2008

  1. Comprehensive model of damage accumulation in silicon

    Journal of Applied Physics, Vol. 103, Núm. 1

  2. From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

    Solid-State Electronics, Vol. 52, Núm. 9, pp. 1430-1436

  3. The role of implanter parameters on implant damage generation: An atomistic simulation study

    AIP Conference Proceedings

  4. The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 260-263

2007

  1. Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D

    ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

  2. Atomistic modeling of defect diffusion in SiGe

    2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

  3. Current capabilities and future prospects of atomistic process simulation

    Technical Digest - International Electron Devices Meeting, IEDM

  4. From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

    ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

2006

  1. Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

    Materials Research Society Symposium Proceedings

  2. Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 253, Núm. 1-2, pp. 63-67

2005

  1. Bimodal distribution of damage morphology generated by ion implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Comprehensive modeling of ion-implant amorphization in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Journal of Applied Physics, Vol. 98, Núm. 5

  5. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    Journal of Applied Physics, Vol. 98, Núm. 4

  6. Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology