Publicacións en colaboración con investigadores/as de Tohoku University (72)

2022

  1. Enhanced terahertz detection of multigate graphene nanostructures

    Nanophotonics, Vol. 11, Núm. 3, pp. 519-529

2019

  1. Asymmetric Dual Grating Gate Graphene-based THz detectors

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  2. Asymmetric Dual Grating Gate Graphene-based THz detectors

    2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)

2017

  1. Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  2. Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation

    2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)

  3. Experimental and theoretical studies of Sub-THz detection using strained-Si FETs

    Journal of Physics: Conference Series

2015

  1. Broadband Characteristics of Ultrahigh Responsivity of Asymmetric Dual-Grating-Gate Plasmonic Terahertz Detectors

    2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ)

  2. Broadband characteristics of ultrahigh responsivity of asymmetric dual-grating-gate plasmonic terahertz detectors

    IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

  3. Plasmonic terahertz emitters and detectors for sensing and wireless communications

    Progress in Electromagnetics Research Symposium

  4. Room-temperature zero-bias plasmonic THz detection by asymmetric dual-grating-gate HEMT

    Proceedings of SPIE - The International Society for Optical Engineering

2013

  1. Extremely-High Sensitive Terahertz Detector based on Dual-Grating Gate InP-HEMTs

    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)

  2. Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

  3. InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging

    IEEE Sensors Journal, Vol. 13, Núm. 1, pp. 89-99