Oak Ridge National Laboratory-ko ikertzaileekin lankidetzan egindako argitalpenak (8)

2004

  1. Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 ° C

    Physical Review B - Condensed Matter and Materials Physics, Vol. 69, Núm. 12

2003

  1. Enhanced low temperature electrical activation of B in Si

    Applied Physics Letters, Vol. 82, Núm. 2, pp. 215-217

2001

  1. Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

    Applied Physics Letters, Vol. 79, Núm. 9, pp. 1273-1275

1999

  1. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

    Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301

1998

  1. Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

    Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274

  2. Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon

    Materials Science in Semiconductor Processing, Vol. 1, Núm. 1, pp. 17-25

1997

  1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050

  2. Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

    Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143