Ingeniería eléctrica, electrónica y telecomunicaciones
Disciplina temática
Ioffe Institute
San Petersburgo, RusiaPublicaciones en colaboración con investigadores/as de Ioffe Institute (8)
2022
-
Nature of the 1/f noise in graphene-direct evidence for the mobility fluctuation mechanism
Nanoscale, Vol. 14, Núm. 19, pp. 7242-7249
2019
-
Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene
Scientific reports, Vol. 9, Núm. 1, pp. 13572
2012
-
Helicity sensitive terahertz radiation detection by field effect transistors
Journal of Applied Physics, Vol. 111, Núm. 12
-
Terahertz photon helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2009
-
1/f noise in p-channel screen-grid field effect transistors (SGrFETs) as a device evaluation tool
AIP Conference Proceedings
2006
-
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
Applied Physics Letters, Vol. 89, Núm. 25
2005
-
TeraHertz detectors based on plasma oscillations in nanometric silicon field effect transistors
Physica Status Solidi C: Conferences
2004
-
Detection of sub-Terahertz and Terahertz radiation by plasma waves in silicon field effect transistors
Proceedings of IEEE Sensors