Publicacions en col·laboració amb investigadors/es de Chalmers University of Technology (28)

2023

  1. Temperature dependance of Intrinsic Spin Orbit Coupling Gap in Graphene probed by Terahertz photoconductivity

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

2022

  1. Temperature-dependent zero-field splittings in graphene

    Physical Review B, Vol. 106, Núm. 24

2015

  1. Erratum: On the effect of δ-doping in self-switching diodes (Applied Physics Letters (2014) 105 (093505))

    Applied Physics Letters

  2. Experimental analysis of shot-noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

    2015 International Conference on Noise and Fluctuations, ICNF 2015

  3. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

    Solid-State Electronics, Vol. 104, pp. 79-85

  4. Phonon black-body radiation limit for heat dissipation in electronics

    Nature Materials, Vol. 14, Núm. 2, pp. 187-192

  5. Shot-noise suppression effects in InGaAs planar diodes at room temperature

    Journal of Physics: Conference Series

  6. Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

    Journal of Physics: Conference Series

2014

  1. Monte Carlo modelling of noise in advanced III–V HEMTs

    Journal of Computational Electronics, Vol. 14, Núm. 1, pp. 72-86

  2. On the effect of δ-doping in self-switching diodes

    Applied Physics Letters, Vol. 105, Núm. 9

2013

  1. 200 GHz communication system using unipolar InAs THz rectifiers

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  2. 200 GHz communication system using unipolar InAs THz rectifiers

    2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)

  3. Cryogenic performance of low-noise InP HEMTs: A Monte Carlo study

    IEEE Transactions on Electron Devices, Vol. 60, Núm. 5, pp. 1625-1631

  4. Room temperature THz detection and emission with semiconductor nanodevices

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2012

  1. Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

    Semiconductor Science and Technology, Vol. 27, Núm. 6

  2. Monte Carlo studies of the intrinsic time-domain response of nanoscale three-branch junctions

    Journal of Applied Physics, Vol. 111, Núm. 8

  3. Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

    Semiconductor Science and Technology, Vol. 27, Núm. 1

2011

  1. Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

    Semiconductor Science and Technology, Vol. 26, Núm. 2

  2. Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  3. Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011