Valladolid
Universidad
National University of Singapore
Singapur, SingapurPublikationen in Zusammenarbeit mit Forschern von National University of Singapore (17)
2024
-
More than a canopy cover metric: Influence of canopy quality, water-use strategies and site climate on urban forest cooling potential
Landscape and Urban Planning
-
Pathology-based brain arterial disease phenotypes and their radiographic correlates
Journal of Stroke and Cerebrovascular Diseases, Vol. 33, Núm. 6
2023
-
Dielectric Environment Sensitivity of Carbon Centers in Hexagonal Boron Nitride
Small, Vol. 19, Núm. 41
2020
-
Fine-mapping of 150 breast cancer risk regions identifies 191 likely target genes
Nature Genetics, Vol. 52, Núm. 1, pp. 56-73
-
Lck bound to coreceptor is less active than free Lck
Proceedings of the National Academy of Sciences of the United States of America, Vol. 117, Núm. 27, pp. 15809-15817
-
TRY plant trait database – enhanced coverage and open access
Global Change Biology, Vol. 26, Núm. 1, pp. 119-188
-
The urgent need for integrated science to fight COVID-19 pandemic and beyond
Journal of Translational Medicine, Vol. 18, Núm. 1
2018
-
Macronutrient-specific effect of the MTNR1B genotype on lipid levels in response to 2 year weight-loss diets
Journal of Lipid Research, Vol. 59, Núm. 1, pp. 155-161
2014
-
Consensus guidelines for the detection of immunogenic cell death
OncoImmunology, Vol. 3, Núm. 9
2013
-
Realistic loophole-free Bell test with atom-photon entanglement
Nature Communications, Vol. 4
2008
-
Comprehensive model of damage accumulation in silicon
Journal of Applied Physics, Vol. 103, Núm. 1
2006
-
Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth
Materials Research Society Symposium Proceedings
2005
-
Bimodal distribution of damage morphology generated by ion implantation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
-
Comprehensive modeling of ion-implant amorphization in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
-
Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
Journal of Applied Physics, Vol. 98, Núm. 4
-
Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
-
Physically based modeling of dislocation loops in ion implantation processing in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology