Voltage tuneable terahertz emission from a ballistic nanometer InGaAsInAlAs transistor

  1. Lusakowski, J.
  2. Knap, W.
  3. Dyakonova, N.
  4. Varani, L.
  5. Mateos, J.
  6. Gonzalez, T.
  7. Roelens, Y.
  8. Bollaert, S.
  9. Cappy, A.
  10. Karpierz, K.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2005

Volumen: 97

Número: 6

Type: Article

DOI: 10.1063/1.1861140 GOOGLE SCHOLAR

Objectifs de Développement Durable